SI4953DY Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode MOSFET

SMD Type
MOSFET
Dual P-Channel MOSFET
SI4953DY (KI4953DY)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Symbol
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body leakage current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On state drain current
Forward Transconductance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Diode Forward Voltage
ID(ON)
gFS
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-30V, VGS=0V
VDS=-30V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-10V, ID=-4.9A (Note.1)
VGS=-4.5V, ID=-3.6A (Note.1)
VGS≤-5V,VDS=-10 V (Note.1)
VDS=-15V, ID=-4.9A (Note.1)
VGS=-10V, VDS=-15V, ID=-4.9A
VGS=-10V, VDS=-15V, RL=15Ω,RG=6Ω
IF=-1.7A, dI/dt=100A/μs
IS=-1.7A,VGS=0V (Note.1)
Note.1:Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%.
Min Typ Max Unit
-30
V
-1
uA
-25
±100 nA
-1
-3
V
53
mΩ
95
-20
A
10
S
2
7.1 Ω
16 25
5
nC
2
9 15
13 20
25 40 ns
15 25
60 90
-1.2 V
■ Marking
Marking
4953
KA****
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