SI4946DY-HF Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

SMD Type
MOSFET
Dual N-Channel MOSFET
SI4946DY-HF (KI4946DY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Test Conditions
ID=250μA, VGS=0V
VDS=60V, VGS=0V
VDS=60V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=5.3A (Note.1)
VGS=4.5V, ID=4.7A (Note.1)
VGS=10V, VDS=5V (Note.1)
VDS=15V, ID=5.3A (Note.1)
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VDS = 30 V, VGS = 10 V, ID = 5.3 A
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Maximum Body-Diode Continuous Current
Pulse Diode Forward Curren
Diode Forward Voltage
Qgs
Qgd
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
trr
Qrr
ta
tb
IS
ISM
VSD
VDS=30V, VGS=5V, ID=5.3A
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 4.5 V, Rg = 1 Ω
VDD = 30 V, RL = 6.8 Ω
ID ≅ 4.4 A, VGEN = 10 V, Rg = 1 Ω
IF= 4.4 A, dI/dt= 100A/μs,TJ = 25℃
Tc = 25 °C
(Note.1)
IS=2A,VGS=0V (Note.1)
Note.1: Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2 %.
Min Typ Max Unit
60
V
1
uA
10
±100 nA
1
3
V
41
mΩ
52
30
A
24
S
840
71
pF
44
3.1
9.5 Ω
17 25
9.2 12
nC
3.3
3.7
30
180
30
45
15 ns
20
40
15
50
50 nC
18
ns
7
3.1
A
30
1.2 V
■ Marking
Marking
4946
KA**** F
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