SI4558DY-HF Datasheet, PDF (2/6 Pages) Guangdong Kexin Industrial Co.,Ltd – Complementary Trench MOSFET

SMD Type
MOSFET
Complementary Trench MOSFET
SI4558DY-HF (KI4558DY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Type Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS
ID=250μA, VGS=0V
ID=-250μA, VGS=0V
N-CH 30
V
P-CH -30
VDS=30V, VGS=0V
N-CH
1
Zero Gate Voltage Drain Current
VDS=-30V, VGS=0V
IDSS
VDS=24V, VGS=0V,TJ=70℃
P-CH
N-CH
-1
μA
5
VDS=-24V, VGS=0V,TJ=70℃
P-CH
-5
Gate-Body Leakage Current
IGSS VDS=0V, VGS=±20V
±100 nA
VDS=VGS , ID=250μA
N-CH 1
Gate Threshold Voltage
VGS(th)
V
VDS=VGS, ID=-250μA
P-CH -1
Static Drain-Source On-Resistance
(Note.1)
VGS=10V, ID=6A
VGS=4.5V, ID=4.8A
RDS(On)
VGS=-10V, ID=-6A
VGS=-4.5V, ID=-4.4A
N-CH
P-CH
40
60
mΩ
40
70
VDS=5V, VGS=10V
N-CH 30
On-State drain Current (Note.1)
ID(On)
VDS=-5V, VGS=-10V
VDS=5V, VGS=4.5V
P-CH -30
A
N-CH 8
VDS=-5V, VGS=-4.5V
P-CH -8
Forward Transconductance (Note.1)
VDS=15V, ID=6A
gFS
VDS=-15V, ID=-6A
N-CH
13
S
P-CH
10.6
Total Gate Charge
Qg
N-Channel:
N-CH
P-CH
16 30
22 35
Gate Source Charge
VGS=10V, VDS=15V, ID=6A
Qgs
P-Channel:
N-CH
3.4
nC
P-CH
5.4
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-6A
Qgd
N-CH
2.3
P-CH
3.6
Turn-On DelayTime
td(on)
N-Channel:
N-CH
P-CH
12 25
12 25
Turn-On Rise Time
VGS=10V, VDS=15V, ID=1A, RG=6Ω N-CH
tr
RL=15Ω
P-CH
12 25
12 25
Turn-Off DelayTime
td(off)
P-Channel:
N-CH
VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω P-CH
27 55
ns
38 55
Turn-Off Fall Time
RL=15Ω
tf
N-CH
P-CH
24 50
25 50
Body Diode Reverse Recovery Time
IF=2A, dI/dt=100A/μs
trr
IF=-2A, dI/dt=100A/μs
N-CH
P-CH
45 80
50 80
Maximum Body-Diode Continuous Current IS
N-CH
P-CH
2
A
-2
Diode Forward Voltage (Note.1)
IS=2A,VGS=0V
VSD
IS=-2A,VGS=0V
N-CH
P-CH
0.77 1.2
-0.77 -1.2 V
Note.1: Pulse test; pulse width ≤ 300 us, duty cycle ≤ 2%.
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