SI4490DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

SMD Type
N-Channel MOSFET
SI4490DY (KI4490DY)
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance *1
On State Drain Current
Forward Transconductance *1
Gate Resistance *2
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage *1
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
IS
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=160V, VGS=0V
VDS=160V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=4A
VGS=6V, ID=4A
VGS= 10 V, VDS ≥ 5V
VDS=15V, ID=5A
VGS=10V, VDS=100V, ID=4A *2
VGS=10V, VDS=100V, RL=25Ω,
RG=6Ω,ID=4A *2
IF= 2.8A, dI/dt= 100A/μs
IS=2.8A,VGS=0V
*1: Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
*2: Guaranteed by design, not subject to production testing.
Min Typ Max Unit
200
V
1
μA
5
±100 nA
2
V
65 80
mΩ
70 90
40
A
19
S
0.2 0.85 1.3 Ω
34 42
7.5
nC
12
14 20
20 30
32 50 ns
25 35
70 100
2.8 A
0.75 1.2 V
■ Typical Characterisitics
40
V_GS = 10 V thru 6 V
32
24
16
8
5V
4V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
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40
35
30
25
20
15
T_C = 125 °C
10
25 °C
5
- 55 °C
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics