SI4435DY-HF Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

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MOSFET
P-Channel MOSFET
SI4435DY-HF (KI4435DY-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Drain–Source Breakdown Voltage
BVDSS VGS = 0 V, ID = –250 μA
Zero Gate Voltage Drain Current
VDS = -30V , VGS = 0V
IDSS
VDS = -15V , VGS = 0V , TJ =70℃
Gate Threshold Voltage
VGS(th) VDS = VGS , ID = -250uA
Gate-Body Leakage
IGSS VDS = 0V , VGS = ±20V
Drain-Source On-State Resistance *
VGS = -10V , ID =-8.0A
rDS(on)
VGS = -4.5V , ID = -5.0A
On-State Drain Current
ID(on) VDS =-5V , VGS = -10V
Forward Transconductance*
gfs VDS = -15V , ID = -8A
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = -15V , VGS = -10V , ID = -4.6A
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = -15V , RL = 15Ω ,
ID = -1A , VGEN = -10V , RG = 6Ω
Fall Time
tf
Source-Drain Reverse Recovery Time
trr IF = -2.5A , di/dt = 100A/us
Continuous Source Current (Diode Conduction) IS
Diode Forward Voltage*
VSD IS = –2.5 A, VGS = 0 V
* Pulse test; pulse width ≤300 μs, duty cycle≤ 2%.
Min Typ Max Unit
-30
V
-1
μA
-5
-1.0
-3
V
±100 nA
0.02
Ω
0.035
-40
A
11
S
47 60
7.1
nC
8
16 24
76 110
ns
130 200
90 140
34 51 ns
-2.5
A
-1.2 V
■ Marking
Marking
4435
KC**** F
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