SI3437DV Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI3437DV (KI3437DV)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Test Conditions
ID=-250μA, VGS=0V
VDS=-150V, VGS=0V
VDS=-150V, VGS=0V, TJ=55℃
VDS=0V, VGS=±20V
VDS=VGS ID=-250μA
VGS=-10V, ID=-1.4A (Note.1)
VGS=-6V, ID=-1A (Note.1)
VGS=-10V, VDS≥-10 V (Note.1)
VDS=-10 V, ID=-1.4A (Note.1)
VGS=0V, VDS=-50V, f=1MHz
f=1MHz
VGS=-10V, VDS=-75V, ID=-1A
Gate Source Charge
Qgs
VGS=-6V, VDS=-7 5V, ID=-1A
Gate Drain Charge
Qgd
Turn-On DelayTime
td(on)
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VDD = - 75 V, RL = 75 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Fall Time
tf
Turn-On DelayTime
td(on)
Turn-On Rise Time
Turn-Off DelayTime
tr
td(off)
VDD = - 75 V, RL = 75 Ω
ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω
Turn-Off Fall Time
tf
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
IF=-1.2A, dI/dt=100A/μs,TJ=25℃
ta
Reverse Recovery Rise Time
tb
Maximum Body-Diode Continuous Current
IS
Tc = 25℃
Pulse Diode Forward Current
ISM
Diode Forward Voltage
VSD
IS=-1A,VGS=0V
Note.1: Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
Min
-150
-2
-3
Typ Max Unit
V
-1
uA
-10
±100 nA
-4
V
750
mΩ
790
A
4.5
S
510
30
pF
21
8.5 13 Ω
12.2 19
8 12
nC
2.1
3.9
9 15
11 18
28 42
12 18
14 21 ns
29 44
23 35
14 21
60 90
120 180 nC
35
ns
25
-1.4
A
-5
-1.2 V
■ Marking
Marking
AH***
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