SI2323DS-HF Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
SI2323DS-HF (KI2323DS-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
IS
VSD
Test Conditions
Min
ID=-250μA, VGS=0V
-20
VDS=-16V, VGS=0V
VDS=-16V, VGS=0V, TJ=55℃
VDS=0V, VGS=±8V
VDS=VGS ID=-250μA
-0.4
VGS=-4.5V, ID=-4.7A
VGS=-2.5V, ID=-4.1A
VGS=-1.8V, ID=-2A
VGS=-4.5V, VDS=-5V
-20
VDS=-5V, ID=-4.7A
VGS=0V, VDS=-10V, f=1MHz *1
VGS=-4.5V, VDS=-10V, ID=-4.7A *1
VGS=-4.5V, VDS=-10V, RL=10Ω,RGEN=6Ω
ID=-1.0A *1
5 sec
Steady State
IS=-1.0A,VGS=0V
Typ Max Unit
V
-1
μA
-10
±100 nA
-1.0 V
39
52 mΩ
68
A
16
S
1020
191
pF
140
12.5 19
1.7
nC
3.3
25 40
43 65
ns
71 110
48 75
-1.0
A
-0.6
-0.7 -1.2 V
*1Pulse test: PW ≤ 300us duty cycle ≤ 2%.
■ Marking
Marking
D3* F
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