PZT3906_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
PZT3906 (KZT3906)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector-emitter cut-off current
Collector-emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Emitter input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE= 0 (Note.1)
VCEO Ic= -1 mA， IB= 0 (Note.1)
VEBO IE= -100μA， IC= 0 (Note.1)
ICBO VCB= -40 V , IE= 0
ICEO VCE=-30V, IC=0
ICEX VCE=-30V, VBE(off)= 3V
IEBO VEB= -5V , IC=0
IC=-10 mA, IB=-1mA (Note.1)
VCE(sat)
IC= -50 mA, IB= -5mA (Note.1)
IC=-10 mA, IB=-1mA (Note.1)
VBE(sat)
IC= -50 mA, IB= -5mA (Note.1)
hFE(1) VCE= -1V, IC=- 0.1mA (Note.1)
hFE(2) VCE= -1V, IC= -1mA
hFE(3) VCE= -1V, IC=- 10mA
hFE(4) VCE= -1V, IC= -50mA
td
VCC=-3V, VBE(off)=-0.5V IC=-10mA,
tr
IB1= -IB2=-1mA
ts
VCC=-3V, IC=-10mA,
tf
IB1= -IB2=-1mA
Cib VEB= -0.5V, IC= 0,f=1MHz
Cob VCB= -5V, IE= 0,f=1MHz
fT VCE= -20V, IC= -10mA,f=100MHz
Min Typ Max Unit
-40
-40
V
-5
-100
-500
nA
-50
-100
-0.25
-0.65
-0.4
V
-0.85
-0.95
60
80
100
300
60
35
35
nS
225
75
10
pF
4.5
250
MHz
Note.1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
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