PXT3906 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP switching transistor

SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
Turn-on time
Delay time
Rise time
Turn-off time
Storage time
Fall time
PXT3906
Symbol
Testconditons
ICBO IE = 0; VCB = -30 V
IEBO IC = 0; VEB = -6 V
VCE = -1 V;IC = -0.1 Ma
VCE = -1 V;IC = -1 mA
hFE VCE = -1 V, IC = -10 mA
VCE = -1 V;IC = -50 mA
VCE = -1 V;IC = -100 mA
VCEsat
IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA
VBEsat
Cc
Ce
fT
F
ton
IC = -10 mA; IB = -1 mA
IC = -50 mA; IB = -5 mA
IE = iE = 0; VCB = -5 V; f = 1 MHz
IC = iC = 0; VEB = -500 mV; f = 1 MHz
IC = -10 mA; VCE = -20 V; f = 100 MHz
IC = -100 ìA; VCE = -5 V; RS = 2 kÙ;
f = 10 Hz to 15.7 kHz
ICon = -10 mA; IBon = -1 mA;
IBoff = 1 mA
td
Min Typ Max Unit
-50 nA
-50 nA
60
80
100
300
60
30
-250 mV
-400 mV
-650
-850 mV
-950 mV
4.5 pF
10 pF
250
MHz
4
dB
65 ns
35 ns
tr
35 ns
toff
300 ns
ts
225 ns
tf
75 ns
Marking
Marking
2A
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