MMBTA93 Datasheet, PDF (2/2 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR PNP SILICON

SMD Type
Transistors
MMBTA93
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector-emitter breakdown voltage *
V(BR)CEO IC = -1.0 mA, IB = 0
-200
V
Collector-base breakdown voltage
V(BR)CBO IC = -100 ìA, IE = 0
-200
V
Emitter-base breakdown voltage
V(BR)EBO IE = -100 ìA, IC = 0
-5
V
Collector cutoff current
ICBO VCB = -160 V, IE = 0
-0.25 ìA
Emitter cutoff current
IEBO VEB = -3.0 V, IC = 0
-0.1 ìA
IC = -1.0 mA, VCE = -10 V
25
DC current gain *
hFE IC = -10 mA, VCE = -10 V
40
IC = -30 mA, VCE = -10 V
25
Collector-emitter saturation voltage *
VCE(sat) IC = -20 mA, IB = -2.0 mA
-0.5 V
Base-emitter saturation voltage *
VBE(sat) IC = -20 mA, IB = -2.0 mA
-0.9 V
Current-gain - bandwidth product
fT IC = -10 mA, VCE = -20 V, f = 100 MHz 50
MHz
Collector-base capacitance
Ccb VCB = -20 V, IE = 0, f = 1.0 MHz
8 pF
* Pulse Test: Pulse Width 300 ìs, Duty Cycle 2.0%.
Marking
Marking
2E
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