MMBTA92 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP high-voltage transistor

SMD Type
Transistors
MMBTA92
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Collector-emitter breakdown voltage *
V(BR)CEO IC = -1.0 mA, IB = 0
Collector-base breakdown voltage
V(BR)CBO IC = -100 ìA, IE = 0
Emitter-base breakdown voltage
V(BR)EBO IE = -100 ìA, IC = 0
Collector cutoff current
ICBO VCB = -200 V, IE = 0
Emitter cutoff current
IEBO VEB = -3.0 V, IC = 0
IC = -1.0 mA, VCE = -10 V
DC current gain *
hFE IC = -10 mA, VCE = -10 V
IC = -30 mA, VCE = -10 V
Collector-emitter saturation voltage *
VCE(sat) IC = -20 mA, IB = -2.0 mA
Base-emitter saturation voltage *
VBE(sat) IC = -20 mA, IB = -2.0 mA
Current-gain - bandwidth product
fT IC = -10 mA, VCE = -20 V, f = 100 MHz
Collector-base capacitance
Ccb VCB = -20 V, IE = 0, f = 1.0 MHz
* Pulse Test: Pulse Width 300 ìs, Duty Cycle 2.0%.
Min
-300
-300
-5
25
40
25
50
Typ Max Unit
V
V
V
-0.25 ìA
-0.1 ìA
-0.5 V
-0.9 V
MHz
6 pF
Marking
Marking
2D
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