MMBTA55 Datasheet, PDF (2/2 Pages) Transys Electronics – PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR

SMD Type
TransistIoCrs
MMBTA55,MMBTA56
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Collector-emitter breakdown voltage* MMBTA55
-60
V(BR)CEO IC = -1.0 mA, IB = 0
MMBTA56
-80
Emitter-base breakdown voltage
V(BR)EBO IE = -100 ìA, IC = 0
-4.0
Base cutoff current
ICES VCE = -60 V, IB = 0
Collector cutoff current
MMBTA55
MMBTA56
ICBO
VCB = -60 V, IE = 0
VCB = -80 V, IE = 0
DC current gain
IC = -10 mA, VCE = -1.0 V
100
HFE
IC = -100 mA, VCE = -1.0 V
100
Collector-emitter saturation voltage
VCE(sat) IC = -100 mA, IB = -10 mA
Base-emitter saturation voltage
Current-gain-bandwidth product
VBE(on)
fT
IC = -100 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0 V, f = 100
MHz
50
* Pulse test: pulse width 300 ìs, duty cycle 2.0%.
Typ Max Unit
V
V
V
-0.1 ìA
-0.1 ìA
-0.1 ìA
-0.25 V
-1.2 V
MHz
hFE Classification
TYPE
Marking
MMBTA55
2H
MMBTA56
2G
2 _{www.kexin.com.cn}