MMBT4403W Datasheet, PDF (2/2 Pages) Pan Jit International Inc. – PNP GENERAL PURPOSE SWITCHING TRANSISTOR

SMD Type
TransistIoCrs
MMBT4403W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage *
Collector-base breakdown voltage
Emitter-base breakdown voltage
Base cutoff current
Collector cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product
Collector-base capacitance
Emitter-base capacitance
Input impedance
Voltage feedback ratio
Small-signal current gain
Output admittance
Delay time
Rise time
Storage time
Fall time
Symbol
Testconditons
V(BR)CEO IC = -1.0 mA, IB = 0
V(BR)CBO IC = -0.1 mA, IE = 0
V(BR)EBO IE = -0.1 mA, IC = 0
IBEV VCE = -35 V, VEB = -0.4 V
ICEX VCE = -35 V, VEB = -0.4 V
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
HFE IC = -10 mA, VCE = -1.0 V
IC = -150 mA, VCE = -2.0 V *
IC = -500 mA, VCE = -2.0 V *
VCE(sat) IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
VBE(sat) IC = -150 mA, IB = -15 mA
IC = -500 mA, IB = -50 mA
fT
IC = -20 mA, VCE = -10 V, f = 100 MHz
CCb VCB = -10 V, IE = 0, f = 1.0 MHz
Ceb VBE = -0.5 V, IC = 0, f = 1.0 MHz
hie IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz
hre IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz
hfe IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz
hoe IC = -1.0 mA, VCE = -10 V, f = 1.0 kHz
td
VCC = -30 V, VEB = -2.0 V,
tr
IC = -150 mA, IB1 = -15 mA
ts
VCC = -30 V, IC = -150 mA,
tf
IB1 = IB2 = -15 mA
* Pulse test: pulse width 300 ìs, duty cycle 2.0%.
Min Typ Max Unit
-40
V
-40
V
-5
V
-0.1 ìA
-0.1 ^ìA
30
60
100
100
300
20
-0.4
-0.75
-0.75
V
-0.95
-1.3
200
MHz
8.5 pF
30 pF
1.5
15 kÙ
0.1
8.0 X 10^-4
60
500
1.0
100 ìmhos
15 ns
20 ns
225 ns
30 ns
Marking
Marking
2T
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