MMBT3904W_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBT3904W
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage (Note.1)
Base - emitter saturation voltage (Note.1)
DC current gain
(Note.1)
Delay time
Rise time
Storage time
Fall time
Collector input capacitance
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0 (Note.1)
VCEO Ic= 1 mA， IB= 0 (Note.1)
VEBO IE= 100μA， IC= 0 (Note.1)
ICBO VCB= 60 V , IE= 0 (Note.1)
ICEO VCE= 40 V , IE= 0 (Note.1)
ICEX VCE= 30 V ,VBE(off)= 3V
IEBO VEB= 5V , IC=0
IC=10 mA, IB=1 mA
VCE(sat)
IC=50 mA, IB=5 mA
IC=10 mA, IB=1 mA
VBE(sat)
IC=50 mA, IB=5 mA
hFE(1) VCE= 1V, IC= 100 uA
hFE(2) VCE= 1V, IC= 1 mA
hFE(3) VCE= 1V, IC= 10 mA
hFE(4) VCE= 1V, IC= 50 mA
td
VCC=3V, VBE(off)=0.5V IC=10mA,
tr
IB1=1mA
ts
VCC=3V, IC=10mA, IB1= IB2=1mA
tf
Cib VEB= 0.5V, IE= 0,f=1MHz
Cob VCB= 5V, IE= 0,f=1MHz
fT
VCE= 20V, IC= 10mA,f=100MHz
Note.1: Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%.
Min Typ Max Unit
60
40
V
5
60
700
nA
50
100
0.25
0.3
V
0.85
0.95
40
70
100
300
60
35
35
nS
225
75
8
pF
4
300
MHz
■ Marking
Marking
K2N
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