MMBT2222AT_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
MMBT2222AT (KMBT2222AT)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Delay time
Rise time
Storage time
Fall time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 75 V , IE= 0
ICEX VCE= 60 V , VEB(off)=3V
IEBO VEB= 6V , IC=0
IC=150 mA, IB=15mA
VCE(sat)
IC= 500 mA, IB= 50mA
IC=150 mA, IB=15mA
VBE(sat)
IC= 500 mA, IB= 50mA
hFE(1) VCE= 10V, IC= 0.1mA
hFE(2) VCE= 10V, IC= 1mA
hFE(3) VCE= 10V, IC= 10mA
hFE(4) VCE= 10V, IC= 150mA
hFE(5) VCE= 10V, IC= 500mA
td
VCC=30V, VBE(off)=-0.5V
tr
IC=150mA, IB1=15mA
ts
VCC=30V, IC=150mA, IB1=IB2=15mA
tf
Cob VCB= 10V, IE= 0,f=1MHz
fT
VCE= 20V, IC= 20mA,f=100MHz
Min Typ Max Unit
75
40
V
6
100
100 nA
100
0.3
1
V
1.2
2
35
50
75
100
300
40
10
25
nS
225
60
8 pF
300
MHz
■ Marking
Marking
1P
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