MJD41C Datasheet, PDF (2/2 Pages) ON Semiconductor – Complementary Power Transistors

SMD Type
Transistors
MJD41C(NPN)
MJD42C(PNP)
Electrical Characteristics Ta = 25
Parameter
Collector-emitter sustaining voltage
Collector cutoff current
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product *2
Small-signal current gain
*1 Pulse test: pulse width 300 ìs, duty cycle
*2 fT= hfe ftest
Symbol
Testconditons
Min
VCEo(sus) IC = 30 mA, IB = 0
100
ICEO VCE = 60 V, IB = 0
ICES VCE = 100 V,VEB = 0
IEBO VBE = 5V, IC = 0
IC = 0.3 A, VCE = 4 V
30
hFE
IC = 3 A, VCE = 4 V
15
VCE(sat) IC = 6 A, IB = 600 mA
VBE(on) IC = 6 A, VCE = 4 V
fT IC = 500 mA,VCE = 10 V,ftest = 1 MHz 3
hfe IC = 0.5 A, VCE = 10 V, f = 1 kHz
20
2.0%.
Typ Max Unit
V
50 ìA
10 ìA
0.5 mA
75
1.5 V
2
V
MHz
hFE Classification
TYPE
Marking
MJD41C
J41C
MJD42C
J42C
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