MBD110DWT1 Datasheet, PDF (2/2 Pages) Motorola, Inc – Dual Schottky Barrier Diodes

SMD Type
MBD110DWT1
MBD330DWT1;MBD770DWT1
Diodes
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
MBD110DWT1
7.0
10
Reverse Breakdown Voltage MBD330DWT1 VBR(R)
IR = 10 A
30
Volts
MBD770DWT1
70
Diode Capacitance
MBD110DWT1 CT
VR = 0, f = 1.0 MHz
0.88
1.0
pF
Total Capacitance
MBD330DWT1
VR = 15 Volts, f = 1.0 MHz
CT
MBD770DWT1
VR = 20 Volts, f = 1.0 MHz
0.9
1.5
pF
0.5
1.0
MBD110DWT1
VR = 3.0 V
0.02
0.25
A
Reverse Leakage
MBD330DWT1
IR
VR = 25 V
13
200
nAdc
MBD770DWT1
VR = 35 V
9
200
nAdc
Noise Figure
MBD110DWT1 NF
f = 1.0 GHz
6
dB
MBD110DWT1
IF = 10 mA
0.5
0.6
MBD330DWT1
IF = 1.0 mAdc
0.38
0.45
Forward Voltage
VF
IF = 10 mA
0.52
0.6
Vdc
MBD770DWT1
IF = 1.0 mAdc
0.47
0.5
IF = 10 mA
0.7
1.0
Marking
Type
Marking
MBD110DWT1 MMBD330DWT1 MBD770DWT1
M4
T4
H5
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