KVN4525E6 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – 250V N-Channel Enhancement Mode MOSFET

SMD Type
TransistIoCrs
KVN4525E6
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
VDS=250V, VGS=0V
Gate-Body Leakage
IGSS
VGS= 40V, VDS=0V
Gate-Source Threshold Voltage
VGS(th) ID=1mA, VDS= VGS
VGS=10V, ID=500mA
Static Drain-Source On-State Resistance *1 RDS(on) VGS=4.5V, ID=360mA
VGS=2.4V, ID=20mA
Forward Transconductance *3
gfs
VDS=10V,ID=0.3A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS=25 V, VGS=0V,f=1MHz
Reverse Transfer Capacitance
Crss
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD =30V, ID=360mA,RG=50 ,
Vqs=10V *2
Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Gate Drain Charge
Diode Forward Voltage*!
Reverse Recovery Time *3
Reverse Recovery Charge *3
Qgs
VDS=25V,VGS=10V,ID=360mA*2
Qgd
VSD
Tj=25 , IS=360mA,VGS=0V
trr
Tj=25 , IF=360mA,
Qrr
di/dt= 100A/ s
*! Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
*2 Switching characteristics are independent of operating junction temperature.
*3 For design aid only, not subject to production testing.
Marking
Marking
N52
Min Typ Max Unit
250 285
V
35 500 nA
1 100 nA
0.8 1.4 1.8 V
5.6 8.5
5.9 9.0
6.4 9.5
0.3 0.475
S
72
pF
11
pF
3.6
pF
1.25
ns
1.70
ns
11.40
ns
3.5
ns
2.6 3.65 nC
0.2 0.28 nC
0.5 0.7 nC
0.97 V
186 260 ns
34 48 nC
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