KUK7606-55A Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – TrenchMOSTM standard level FET

SMD Type
TransistIoCrs
KUK7606-55A
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
ID = 0.25 mA; VGS = 0 V;Tj = 25
30
V
drain-source breakdown voltage
V(BR)DSS
ID = 0.25 mA; VGS = 0 V;Tj = -55
27
V
ID = 1 mA; VDS = VGS;Tj = 25
2
3
4
V
gate-source threshold voltage
VGS(th) _{ID = 1 mA; VDS = VGS;Tj = 175}
1
V
ID = 1 mA; VDS = VGS;Tj = -55
4.4 V
Zero gate voltage drain current
IDSS
VDS = 30 V; VGS = 0 V;Tj = 25
VDS = 30 V; VGS = 0 V;Tj = 175
0.05 10 ìA
500 ìA
gate-source leakage current
IGSS VGS = 20 V; VDS = 0 V
2 100 nA
drain-source on-state resistance
RDSon
VGS = 10 V; ID = 25 A;Tj = 25
VGS = 10 V; ID = 25 A;Tj = 175
4.3 5 mÙ
9.3 mÙ
input capacitance
Ciss
4500 6000 pF
output capacitance
Coss VGS = 0 V; VDS = 25 V;f = 1 MHz
1500 1800 pF
reverse transfer capacitance
Crss
960 1300 pF
turn-on delay time
td(on)
35 55 ns
rise time
turn-off delay time
tr
td(off)
VDD = 30 V; RL = 1.2Ù;VGS = 10 V; RG = 10Ù
130 200 ns
155 230 ns
fall time
tf
150 220 ns
internal drain inductance
Ld
from drain lead 6 mm from package to centre
of die
2.5
nH
internal source inductance
Ls
Measured from source lead soldering point to
source bond pad
7.5
nH
Continuous reverse drain current
IDR
75 A
Pulsed reverse drain current
IDRM
240 A
source-drain (diode forward) voltage
IF = 25 A; VGS = 0 V
VSD
I = 75 A; V = 0 V
0.85 1.2 V
1.1
V
reverse recovery time
trr
IS = 75 A; -dIF/dt = 100 A/ìs;
400
ns
recovered charge
Qr
VGS = -10 V; VDS = 30 V
1.0
ìC
Drain-source non-repetitive unclamped
inductive turn-off energy
WDSS ^{ID=75A;VDD 25V;VGS=10V;RGS=50Ù;Tmb=25}
500 mJ
2 _{www.kexin.com.cn}