KI9926A Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual N-Channel MOSFET

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KI9926A
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate-Body Leakage
Drain-Source On-State Resistance *2
On-State Drain Current *2
Forward Transconductance *2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Continuous Source Current (Diode Conduction)
Diode Forward Voltage *2
Symbol
Test conditions
VDSS VGS = 0 V, ID = 250 μA
VDS = 20V , VGS = 0V
IDSS
VDS = 20V , VGS = 0V , TJ =55℃
VGS(th) VDS = VGS , ID = 250uA
IGSS VDS = 0V , VGS = ±12V
VGS = 4.5V , ID = 6.5A
rDS(on)
VGS = 2.5V , ID = 5.4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 15V , ID =6A
Qg
Qgs VDS = 15V , VGS = 4.5V , ID = 6A
Qgd
td(on)
tr
td(off)
VDD = 15 V, RL = 15 Ω
ID =1 A, VGEN = 4.5V, RG = 6 Ω
tf
IS
VSD IS = 1.7A, VGS = 0 V
*2 Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
MOSFET
Min Typ Max Unit
20
V
1
uA
25
0.6
V
±100 nA
0.023 0.030
Ω
0.030 0.040
20
A
22
S
13 20
3
nC
3.3
22 35
40 60
ns
50 75
20 30
1
A
0.7 1.2 V
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