KI4923DY Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – Dual P-Channel 30-V (D-S) MOSFET

SMD Type
ICIC
KI4923DY
Electrical Characteristics Ta = 25
Parameter
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current*
Drain-Source On-State Resistance*
Forward Transconductance*
Schottky Diode Forward Voltage*
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Symbol
Testconditons
VGS(th) VDS = VGS, ID = -250 A
IGSS VDS = 0 V, VGS = 20 V
VDS = -24V, VGS = 0 V
IDSS
VDS = -24V, VGS = 0 V, TJ = 85
ID(on) VDS =- 5 V, VGS = -10 V
VGS = -10 V, ID = -8.3A
rDS(on)
VGS = -4.5 V, ID = -6.8A
gfs VDS = -10 V, ID = -8.3A
VSD IS = -1.7 A, VGS = 0 V
Qg
Qgs VDS = -15V, VGS = -10 V, ID = -8.3 A
Qgd
td(on)
tr VDD = -15 V, RL = 15
td(off) ID = -1 A, VGEN = -10V, RG = 6
tf
trr IF = -1.7 A, di/dt = 100 A/ s
* Pulse test; pulse width 300 s, duty cycle 2%.
Min
Typ
Max Unit
-1
-3
V
100 nA
-1
A
-25
A
-30
A
0.017 0.021
0.025 .031
26
S
-0.8
-1.2
V
45.5
70
nC
6.5
nC
12.6
nC
15
25
ns
10
15
ns
135 210 ns
80
120 ns
70
110 ns
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