KC856A Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistor

SMD Type
Transistors
KC856A,B/KC857A,B,C/KC858A,B,C
(BC856A,B/BC857A,B,C/BC858A,B,C)
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
KC856
KC857
Symbol
Testconditons
VCBO Ic= -10ìA, IE=0
Min Typ Max Unit
-80
-50
V
KC858
-30
KC856
-65
Collector-emitter breakdown voltage KC857
VCEO Ic= -10 mA, IB=0
-45
KC858
-30
Emitter-base breakdown voltage
VEBO IE= -10ìA, IC=0
-5
KC856
VCB= -70 V , IE=0
Collector cut-off current
KC857
ICBO VCB= -45 V , IE=0
KC858
VCB= -25 V , IE=0
KC856
VCE= -60 V , IB=0
Collector cut-off current
KC857
ICEO VCE= -40 V , IB=0
KC858
VCE= -25 V , IB=0
Emitter cut-off current
IEBO VEB= -5 V , IC=0
KC856A, 857A,858A
120
DC current gain
KC856B, 857B,858B hFE VCE= -5V, IC= -2mA
220
KC857C,KC858C
420
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB= -5 mA
Base-emitter saturation voltage
VBE(sat) IC= -100 mA, IB= -5mA
Collector capacitance
Cob VCB=-10V,f=1MHz
V
V
-0.1
A
-0.1
A
-0.1
A
250
475
800
-0.5 V
-1.1 V
4.5 pF
Transition frequency
fT
VCE= -5 V, IC= -
10mA,f=100MHz
100
MHz
Marking
NO.
Marking
NO.
Marking
NO.
Marking
KC856A
3A
KC857A
3E
KC858A
3J
KC856B
3B
KC857B
3F
KC858B
3K
KC857C
3G
KC858C
3L
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