IRF7855 Datasheet, PDF (2/6 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
IRF7855 (KRF7855)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, TJ=125℃
IGSS VDS=0V, VGS=±20V
VGS(th) VDS=VGS , ID=100μA
RDS(On) VGS=10V, ID=12A
gFS VDS=25V, ID=7.2A
Ciss
Coss VGS=0V, VDS=25V, f=1MHz
Crss
Coss VGS = 0V, VDS = 1V, ƒ = 1.0MHz
Coss VGS = 0V, VDS = 48V, ƒ = 1.0MHz
Coss eff VGS = 0V, VDS = 0 to 48V
Qg
Qgs VGS=10V, VDS=30V, ID=7.2A
Qgd
td(on)
tr
td(off)
VGS=10V, VDS=30V, ID=7.2A,RG=6.2Ω
tf
trr
IS= 7.2A, VGS=0, dI/dt= 100A/μs,TJ = 25℃
Qrr IF= 7.2A, VDD=25V, dI/dt= 100A/μs,TJ = 25℃
Min Typ Max Unit
60
V
20
μA
250
±100 nA
3
4.9 V
7.4 9.4 mΩ
14
S
1560
440
120
pF
1910
320
520
26 39
6.8
nC
9.6
8.7
13
16
ns
12
33 50
38 57 nC
Maximum Body-Diode Continuous Current
IS
MOSFET symbol
showing the
Pulsed Source Current
integral reverse
ISM _{p-n junction diode.}
D
G
S
2.3
A
97
Diode Forward Voltage
VSD IS= 7.2A, VGS=0, TJ = 25℃
0.71 1.3 V
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