IRF7476-HF Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
IRF7476-HF (KRF7476-HF)
■ Typical Characterisitics
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Output Gate Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
trr
Qrr
trr
Qrr
IS
ISM
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=9.6V, VGS=0V
VDS=9.6V, VGS=0V, TJ=125℃
VDS=0V, VGS=±12V
VDS=VGS , ID=250μA
VGS=4.5V, ID=15A
VGS=2.8V, ID=12A
VDS=6V, ID=12A
VGS=0V, VDS=6V, f=1MHz
VGS=4.5V, VDS=10V, ID=12A
VGS = 0V, VDS = 5V
VGS=4.5V, VDS=6V, ID=12A,RG=1.8Ω
IF= 12A, VR=12V, dI/dt= 100A/us,TJ=25℃
IF= 12A, VR=12V, dI/dt= 100A/us,TJ=125℃
IS=12A,VGS=0V,TJ=25℃
IS=12A,VGS=0V,TJ=125℃
Min Typ Max Unit
12
V
100
uA
250
±200 nA
0.6
1.9 V
8
mΩ
30
31
S
2550
2190
pF
450
26 40
4.6
nC
11
17
11
29
19
ns
8.3
55 82
59 89 nC
54 81 ns
60 90 nC
2.5
A
120
0.87 1.2
V
0.73
■ Marking
Marking
7476
KC**** F
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