IRF7413 Datasheet, PDF (2/6 Pages) International Rectifier – Power MOSFET(Vdss=30V, Id=12A)

SMD Type
MOSFET
N-Channel MOSFET
IRF7413 (KRF7413)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Current
Diode Forward Voltage
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
IDSS
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=125℃
IGSS
VDS=0V, VGS=±20V
VGS(th) VDS=VGS , ID=250μA
RDS(On)
VGS=10V, ID=7.2A *1
VGS=4.5V, ID=6A
gFS
VDS=10V, ID=7.2A
Ciss
Coss
VGS=0V, VDS=25V, f=1MHz
Crss
Coss
VGS=0V, VDS=1V, f=1MHz
VGS=0V, VDS=24V, f=1MHz
Coss eff VGS=0V, VDS=0 to 24V
Qg
Qgs
VGS=10V, VDS=24V, ID=7.2A
Qgd
td(on)
tr
td(off)
VGS=10V, VDS=10 V, ID=7.2A,
RG=6.2Ω *1
tf
trr
IF= 7.2A, dI/dt= 100A/μs, TJ = 25℃ *1
Qrr
IS
*2
ISM
VSD
IS=7.2A,VGS=0V,TJ = 25℃ *1
*1: Pulse width ≤ 300μs; duty cycle ≤ 2%.
*2: MOSFET symbol showing the integral reverse p-n junction diode.
Min Typ Max Unit
30
V
1
μA
25
±100 nA
1
3
V
11
mΩ
18
16
S
1670
670
100
pF
2290
680
1020
44 66
7.9
nC
9.2
8.8
8
35
ns
14
50 75
74 110 nC
3.1
A
96
1
V
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