FZT869 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-Emitter Turn-On Voltage *
DC current gain *
Transitional frequency
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT869
FZT869
Symbol
Testconditons
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
ICBO
VCB=50V
VCB=50V,Ta = 100
IEBO VEB=6V
IC=0.5A, IB=10mA
VCE(sat) ^{IC=1A, IB=10mA}
IC=2A, IB=10mA
IC=6.5A, IB=150mA
VBE(sat) IC=6.5A, IB=300mA
VBE(on) IC=6.5A, VCE=1V
IC=10mA, VCE=1V
hFE
IC=1A, VCE=1V
IC=7A, VCE=1V
IC=20A, VCE=2V
fT IC=100mA, VCE=10V f=50MHz
Cobo VCB=10V, f=1MHz
t(on) IC=1A, VCC=10V
t(off) IB1=IB2=100mA
Transistors
Min Typ Max Unit
60 120
V
25 35
V
6
8
V
50 nA
1 ìA
10 nA
35 ₅₀
67
168
110
215
mV
350
1.2 V
1.13 V
300 450
300 450
200 300
40 100
100
MHz
70
pF
60
ns
680
ns
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