FZT851_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
Transistors
NPN Transistors
FZT851 (KZT851)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector-emitter breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current RB ≤1kΩ
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-Emitter Turn On Voltage
DC current gain
(Note.1)
Switching Times
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCER IC=1mA, RB ≤1kΩ
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO
VCB= 120 V , IE= 0
VCB= 120 V , IE= 0 , Ta = 100℃
ICER
VCB= 120 V , IE= 0
VCB= 120 V , IE= 0 , Ta = 100℃
IEBO VEB= 6V , IC=0
IC=0.1 A, IB=5mA (Note.1)
IC=1 A, IB=50mA (Note.1)
VCE(sat)
IC=2 A, IB=50mA (Note.1)
IC=6 A, IB=300mA (Note.1)
VBE(sat) IC=6 A, IB=300mA (Note.1)
VBE(on) VCE= 6V, IC= 1A (Note.1)
hFE(1) VCE= 1V, IC= 10mA
hFE(2) VCE= 1V, IC= 2A
hFE(3) VCE= 1V, IC= 5A
hFE(4) VCE= 1V, IC= 10A
ton
IC=1A, IB1=100mA
toff
IB2=100mA, VCC=10V
Cob VCB= 10V, f=1MHz
fT VCE= 10V, IC= 100mA,f=50MHz
Note.1: Pulse width=300us. Duty cycle ≤ 2%
Min Typ Max Unit
150
150
V
60
6
0.1
1
0.1 uA
1
0.1
50
100
mV
170
375
1.2
V
1.15
100
300
100
300
75
25
45
ns
1100
45
pF
130
MHz
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