FZT789A Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

SMD Type
Transistors
FZT789A
Electrical Characteristics Ta = 25
Parameter
Breakdown Voltages
Breakdown Voltages *
Breakdown Voltages
Collector Cut-Off Current
Emitter Cut-Off Current
Saturation Voltages *
Saturation Voltages *
Base-Emitter Turn-On Voltage *
Static Forward Current Transfer Ratio
Transitional frequency
Input capacitance
Output capacitance
Turn-on time
Turn-off time
* Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
VCB=-15V
ICBO
VCB=-15V,Ta = 100
IEBO VEB=-4V
IC=-1A, IB=-10mA
VCE(sat) IC=-2A, IB=-20mA
IC=-3A, IB=-100mA
VBE(sat) IC=-1A, IB=-10mA
VBE(on) IC=-1A, VCE=-2V
IC=-10mA, VCE=-2V
IC=-1A, VCE=-2V*
hFE
IC=-2A, VCE=-2V*
IC=-6A, VCE=-2V*
fT IC=-50mA, VCE=-5V, f=50MHz
Cibo VEB=-0.5V, f=1MHz
Cobo VCB=-10V, f=1MHz
t(on) IC=-500mA, VCC=-10V
t(off) IB1=IB2=-50mA
Marking
Marking
FZT789A
Min Typ Max Unit
-25 -40
V
-25 -35
V
-5 -8.5
V
-0.1
10
ìA
-0.1 ìA
-0.15 -0.25
-0.30 -0.45 V
-0.30 -0.50
-0.8 -1.0 V
-0.8
V
300
800
250
200
100
100
MHz
225
pF
25
pF
35
ns
400
ns
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