FMMT634 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON POWER DARLINGTON TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector Emitter Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio*
Current-gain-bandwidth product
Output capacitance
Switching times
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
634
FMMT634
Symbol
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=80V
ICES _VCE=80V
IEBO _VEB=7V
Testconditons
IC=100mA, IB=1mA
IC=250mA, IB=1mA
VCE(sat) ^{IC=500mA, IB=5mA}
IC=900mA, IB=5mA
IC=900mA, IB=5mA
IC=1A, IB=5mA
VBE(sat) _IC=1A,IB=5mA
VBE(ON) _IC=1A,VCE=5V
IC=10mA, VCE=5V
IC=100mA, VCE=5V
hFE ^{IC=1A, VCE=5V}
IC=2A, VCE=5V
IC=5A, VCE=5V
IC=1A, VCE=2V
fT _{IC=50mA,VCE=10V,f=100MHz}
Cobo _{VCB=10V,f=1MHz}
ton IC=500mA, VCC=20V
toff IB= 1mA
Transistors
Min Typ Max Unit
120 170
V
100 115
V
12 16
V
10 nA
100 nA
10 nA
0.67 0.75
0.72 0.80
0.75 0.85
0.82 0.93
V
0.68
0.85 0.96
1.5 1.65 V
1.33 1.5 V
50K
20K 60K
15K 14K
5K 600
24K
140
MHz
9 20 pF
290
ns
2.4
ìs
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