FMMT625_15 Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – NPN Transistors

SMD Type
NPN Transistors
FMMT625 (KMMT625)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Collector- emitter cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base-emitter turn-on voltage
DC current gain
Turn-On Time
Turn-Off Time
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= 100 μA， IE= 0
VCEO Ic= 10 mA， IB= 0
VEBO IE= 100μA， IC= 0
ICBO VCB= 130 V , IE= 0
ICES VCE= 130 V , IE= 0
IEBO VEB= 4V , IC=0
IC=100 mA, IB=10mA (Note.1)
VCE(sat) IC=100 mA, IB=1mA (Note.1)
IC=1 A, IB=50mA (Note.1)
VBE(sat) IC= 1 A, IB= 50mA (Note.1)
VBE(on) VCE= 10V, IC= 1 A (Note.1)
hFE(1) VCE= 10V, IC= 10mA
hFE(2) VCE= 10V, IC= 200mA
hFE(3) VCE= 10V, IC= 1 A
hFE(4) VCE= 10V, IC= 3 A
ton
VCC=50V, IC=0.5A
toff
IB1=-IB2=50mA
Cob VCB= 10V, f=1MHz
fT
VCE= 10V,IC=50mA, f=100 MHz
Note.1: Pulse width = 300u s; duty cycle <2%
Transistors
Min Typ Max Unit
150
150
V
5
100
100 nA
100
50
200 mV
300
1
V
1
200
300
30
15
160
ns
1500
10 pF
100
MHz
■ Marking
Marking
625
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