FMMT614 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

SMD Type
FMMT614
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain *
Output capacitance
Switching times
* Pulse test: tp = 300 ìs; d 0.02.
Symbol
Testconditons
V(BR)CBO _IC=10ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=10ìA
ICBO _{VCB=100V,IE=0}
ICES _{VCE=100V,IE=0}
IEBO _VEB=8V
VCE(sat) ^{IC=500mA,IB=5mA}
IC=100mA,IB=0.1mA
VBE(sat) _{IC=500mA,IB=5mA}
VBE(ON) _{IC=500mA,VCE=5V}
hFE
Cobo
ton
IC=100mA,VCE=5V
IC=500mA,VCE=5V
VCB=10V,f=100MHz
IC=100ìA, VS=10V
toff IB=0.1mA
Marking
Marking
614
Transistors
Min Typ Max Unit
120 300
V
100 130
V
10 10
V
0.02 10 nA
10 ìA
100 nA
0.9 1.0
0.78 0.9
V
1.7 1.9 V
1.5 1.8 V
15K
5K
6
pF
0.7
ìs
2.5
ìs
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