FMMT597 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector-Emitter Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
597
FMMT597
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA
V(BR)EBO _IE=-100ìA
ICBO _VCB=-250V
ICES
IEBO
VCE=-250V
VEB=-4V
VCE(sat) ^{IC=-50mA, IB=-5mA}
IC=-100mA, IB=-20mA
VBE(sat) _{IC=-100mA, IB=-20mA}
VBE(ON) _{IC=-100mA,VCE=-10V}
IC=-1mA,VCE=-10V
hFE _{IC=-50mA,VCE=-10V *}
IC=-100mA,VCE=-10V *
fT _{IC=-50mA,VCE=-10V,f=100MHz}
Cobo _{VCB=-10V,f=1MHz}
Min Typ Max Unit
-300
V
-300
V
-5
V
-100 nA
-100 nA
-100 nA
-0.25 V
-0.25 V
-1.0 V
-0.85 V
100
100
300
100
75
MHz
10 pF
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