FMMT593 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector-Emitter Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
593
FMMT593
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA
V(BR)EBO _IE=-100ìA
ICBO _VCB=-100V
ICES _VCE=-100V
IEBO _VEB=-4V
VCE(sat) ^{IC=-250mA, IB=-25mA}
IC=-500mA, IB=-50mA
VBE(sat) _{IC=-500mA, IB=-50mA}
VBE(ON) _{IC=-1mA,VCE=-5V}
IC=-1mA, VCE=-5V
hFE ^{IC=-250mA,VCE=-5V*}
IC=-500mA, VCE=-5V*
fT
Cobo
IC=-1A, VCE=-5V,
IC=-50mA,VCE=-10V,f=100MHz
VCB=-10V,f=1MHz
Min Typ Max Unit
-120
V
-100
V
-5
V
-100 nA
-100 nA
-100 nA
-0.2 V
-0.3 V
-1.1 V
-1.0 V
100
100
100
300
50
50
MHz
5 pF
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