FMMT549 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

SMD Type
TransistIoCrs
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
DC current gain *
Current-gain-bandwidth product
Output capacitance
Switching times
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
549
FMMT549
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-30V
IEBO VEB=-4V
VCE(sat)
IC=-1A,IB=-100mA
IC=-2A,IB=-200mA
VBE(sat) IC=-1A,IB=-100mA
VBE(ON) IC=-1A,VCE=-2V
IC=-50mA, VCE=-2V
IC=-1A, VCE=-2V
hFE
I =-2A, V =-2V
IC=-500mA,VCE=-2V
fT IC=-100mA,VCE=-5V,f=100MHz
Cobo VCB=-10V,f=1MHz
ton VCB=-10V, f=1MHz
toff IC=-500mA,VCC=-10V,IB1=IB2=-50mA
Min Typ Max Unit
-35
V
-30
V
-5
V
-0.1 ìA
-0.1 ìA
-0.25 -0.5
-0.50 -0.75
V
-0.9 -1.25 V
-0.85 -1 V
70 200
80 130
40 80
100 160 300
100
MHz
25 pF
50
ns
300
ns
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