FMMT494 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Collector Cut-Off Currents
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Transition Frequency
Collector-Base Breakdown Voltage
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
494
FMMT494
Symbol
Testconditons
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=120V
ICES _VCE=120V
IEBO _VEB=4V
VCE(sat) ^{IC=250mA,IB=25mA}
IC=500mA,IB=50mA
VBE(sat) _{IC=500mA,IB=50mA}
VBE(ON) _{IC=500mA,VCE=10V}
IC=1mA, VCE=10V*
hFE ^{IC=250mA, VCE=10V*}
IC=500mA, VCE=10V*
fT
Cobo
IC=1A, VCE=10V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
Transistors
Min Typ Max Unit
140
V
120
V
5
V
100 nA
100 nA
100 nA
0.2
0.3
V
1.1 V
1.0 V
100
100
300
60
20
100
MHz
10 pF
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