FMMT458 Datasheet, PDF (2/2 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR

SMD Type
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector Cut-Off Current
Emitter cut-off current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter turn on voltage
Static Forward Current Transfer Ratio
Transition frequency
Output capacitance
Switching times
Marking
Marking
458
FMMT458
Symbol
Testconditons
V(BR)CBO IC=100ìA
V(BR)CEO IC=10mA
V(BR)EBO IE=100ìA
ICBO VCB=320V
ICES VCE=320V
IEBO VEB=4V
IC=20mA,IB=2mA
VCE(sat)
IC=50mA,IB=6mA
VBE(sat) IC=50mA,IB=5mA
VBE(on) IC=50mA,VCE=10V
IC=1mA, VCE=10V
hFE IC=50mA, VCE=10V*
IC=100mA, VCE=10V*
fT IC=10mA,VCE=20V,f=20MHz
Cobo VCB=20V, f=1MHz
ton IC=50mA, VCC=100V
toff IB1=5mA, IB2=-10mA
Transistors
Min Typ Max Unit
400
V
400
V
5
V
100 nA
100 nA
100 nA
0.2 V
0.5 V
0.9 V
0.9 V
100
100
300
15
50
MHz
5 pF
135
ns
2260
ns
2 _{www.kexin.com.cn}