BCP69_15 Datasheet, PDF (2/2 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
BCP69 (KCP69)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Collector capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， IB=0
VEBO IE= -100μA， IC=0
ICBO
VCB= -25 V , IE=0
VCB= -25 V , IE=0,TJ=150℃
IEBO VEB= -5V , IC=0
VCE(sat) IC=-1 A, IB=-100mA
VBE(sat) IC=-1 A, IB=-100mA
VCE= -10V, IC=- 5mA
VBE
VCE= -1V, IC= -1 A
VCE= -10V, IC= -5mA
hFE VCE= -1V, IC= -500mA
VCE= -1V, IC=- 1 A
Cob VCB= -5V, IE= Ie=0,f=1MHz
fT
VCE= -5V, IC= -10mA,f=100MHz
Min Typ Max Unit
-32
-20
V
-5
-100 nA
-10 uA
-100 nA
-0.5
-1.2
V
-0.62
-1
50
85
375
60
48
pF
40
MHz
■ Classification of hfe(2)
Type
Range
Marking
BCP69
83-375
BCP69
BCP69-16
100-250
BCP69-16
BCP69-25
160-375
BCP69-25
■ Typical Characterisitics
400
hFE
300
200
100
−^010−1
−1
V_CE = −1 V.
2 _{www.kexin.com.cn}
−10
−10²
Fig.1 DC current gain; typical values.
−10³
IC (mA)
−10⁴