BCP69 Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP medium power transistor

SMD Type
Transistors
BCP69
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min Typ Max Unit
Collector cutoff current
ICBO
IE = 0 A; VCB = -25 V
IE = 0 A; VCB = -25 V; Tj = 150
-100 nA
-10 ìA
Emitter cutoff current
IEBO IC = 0 A; VEB = -5 V
-100 nA
DC current gain
BCP69
VCE = -10 V; IC = -5 mA
50
VCE = -1 V; IC = -500 mA
85
375
hFE VCE = -1 V; IC = -1 A
60
BCP69-16
100
250
BCP69-16/IN
VCE = -1 V; IC = -500 mA
140
230
BCP69-25
160
375
Collector-emitter saturation voltage
VCEsat IC = -1 A; IB = -100 mA;
-500 mV
Base-emitter voltage
VCE = -10 V; IC = -5 mA
VBE
VCE = -1 V; IC = -1 A
-700 mV
-1
V
Collector capacitance
Cc IE = ie = 0 A; VCB = -10 V; f = 1 MHz
28
pF
Transition frequency
fT IC = -50 mA; VCE = -5 V; f = 100 MHz 40 140
MHz
hFE Classification
TYPE
Marking
BCP69
BCP69
BCP69-16
BCP69/16
BCP69-16/IN
69-16N
BCP69-25
BCP69/25
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