BCF81 Datasheet, PDF (2/2 Pages) NXP Semiconductors – NPN general purpose transistor

SMD Type
TransistIoCrs
BCF81
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Transition frequency
Noise figure
Symbol
Testconditons
Min Typ Max Unit
ICBO IE = 0; VCB = 20 V
100 nA
ICBO IE = 0; VCB = 20 V; Tj = 100
10 ìA
IEBO IC = 0; VEB = 5 V
100 nA
hFE IC = 2 mA; VCE = 5 V
420
800
IC = 10 mA; IB = 0.5 mA
VCE(sat)
IC = 50 mA; IB = 2.5 mA
120 250 mV
210
mV
IC = 10 mA; IB = 0.5 mA
VBE(sat)
IC = 50 mA; IB = 2.5 mA
750
mV
850
mV
VBE IC = 2 mA; VCE = 5 V
550
700 mV
CC IE = ie = 0; VCB = 10 V; f = 1 MHz
2.5
pF
fT
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
NF
IC = 200 ìA; VCE = 5 V; RS = 2 kÙ; f =
1 kHz; B = 200 Hz
1.2 4
dB
Marking
Marking
K9p
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