BC859W_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
BC859W,BC860W
(KC859W,KC860W)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
DC current gain
Noise Figure
Collector output capacitance
Emitter output capacitance
Transition frequency
Symbol
Test Conditions
BC859W
BC860W
VCBO Ic= -100 μA， IE=0
BC859W
BC860W
BC859W
BC859W
BC860W
VCEO Ic= -1 mA， IB=0
VEBO
ICBO
IE= -100μA， IC=0
VCB= -30 V , IE=0
VCB= -30 V , IE=0,TJ = 25℃
VCB= -50 V , IE=0
BC860W
IEBO
VCE(sat)
VCB= -50 V , IE=0,TJ = 25℃
VEB= -5V , IC=0
IC=-10 mA, IB=-0.5mA
IC=-100 mA, IB=-5mA
BCW859W,860W
BCW859BW,860BW
VBE(sat)
VBE
IC=-100 mA, IB=-5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
hFE VCE= -5V, IC= -2mA
BCW859CW,860CW
BCW859W,860W
BCW859BW,860BW
BCW859CW,860CW
IC = -200 u A; VCE = -5 V;
RS = 2 kΩ;f = 10 Hz to 15.7 kHz
NF
IC=-200 u A; VCE = -5 V;
RS = 2 kΩ,f = 1 kHz; B = 200 Hz
Cob VCB= -10 V, IE=ie=0,f=1MHz
Ce VEB= -0.5V, IC=ic=0,f=1MHz
fT
VCE= -5V, IC= -10mA,f=100MHz
Min Typ Max Unit
-30
-50
-30
V
-45
-5
-100 nA
-4 uA
-15 nA
-4 uA
-100 nA
-0.3
-0.65
-1.2 V
0.6
0.75
0.82
220
800
220
475
420
800
4
dB
4
10
100
5
pF
MHz
■ CLASSIFICATION OF hFE
Type
BC859W BC859BW
Range
220-800
220-475
Marking
4D*
4B*
BC859CW
420-800
4C*
BC860W
220-800
4H*
BC860BW
220-475
4F*
BC860CW
420-800
4G*
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