BC859W Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose transistors

SMD Type
TransistIoCrs
BC859W,BC860W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC859W; BC860W
DC current gain
BC859BW; BC860BW
BC859CW; BC860CW
Collector-emitter saturation voltage
Base-emitter voltage *2
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
BC859W; BC860W;
BC859BW; BC860BW;
BC859CW; BC860CW
Symbol
Testconditons
Min Typ Max Unit
ICBO IE = 0; VCB = -30 V
-15 nA
ICBO IE = 0; VCB = -30 V; Tj = 150
-4 ìA
IEBO IC = 0; VEB = -5 V
-100 nA
220
800
hFE IC = -2 mA; VCE = -5 V;
220
475
420
800
IC = -10 mA; IB = -0.5 mA
VCE(sat)
IC = -100 mA; IB = -5 mA;
-300 mV
-650 mV
IC = -2 mA; VCE = -5 V
VBE
IC = -10 mA; VCE = -5 V
600
750 mV
820 mV
CC IE = ie = 0; VCB = -10 V; f = 1 MHz
5 pF
Ce IC = ic = 0; VEB = -500 mV; f = 1 MHz
10
pF
fT
IC = -10 mA; VCE = -5 V; f = 100 MHz 100
MHz
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;f
= 10 Hz to 15.7 kHz
NF
IC=-200 ìA; VCE = -5 V; RS = 2 kÙ;f =
1 kHz; B = 200 Hz
4
dB
4
*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
*2. VBE decreases by about -2 mV/K with increasing temperature.
hFE Classification
TYPE
Marking
BC859W
4D
TYPE
Marking
BC860W
4H
BC859BW
4B
BC859CW
4C
BC860BW
4F
BC860CW
4G
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