BC856_15 Datasheet, PDF (2/3 Pages) Guangdong Kexin Industrial Co.,Ltd – PNP Transistors

SMD Type
Transistors
PNP Transistors
BC856~BC858 (KC856~KC858)
■ Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
BC856
BC857
BC858
Collector- emitter breakdown voltage BC856
BC857
BC858
Emitter - base breakdown voltage
Collector-base cut-off current
BC856
BC857
BC858
Collector- emittercut-off current
BC856
BC857
BC858
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
BC856A,857A,858A
BC856B,857B,858B
BC857C,858C
Collector output capacitance
Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1mA， IB=0
VEBO IE= -100μA， IC=0
VCB= -70 V , IE=0
ICBO VCB= -45 V , IE=0
VCB= -25 V , IE=0
VCE= -55 V , IE=0
ICEO VCE= -40 V , IE=0
VCE= -25 V , IE=0
IEBO VEB= -5V , IC=0
VCE(sat) IC=-100 mA, IB=-5mA
VBE(sat) IC=-100 mA, IB=-5mA
hFE VCE= -5V, IC= -2mA
Cob VCB= -10V, f=1MHz
fT
VCE= -5V, IC= -10mA,f=100MHz
Min Typ Max Unit
-80
-50
-30
-65
V
-45
-30
-5
-100 nA
-1
uA
-100 nA
-0.5
V
-1.1
125
250
220
475
420
800
4.5 pF
100
MHz
■ Classification of hfe
Type
Range
Marking
BC856A
125-250
3A
BC856B
220-475
3B
BC857A
125-250
3E
BC857B
220-475
3F
BC857C
420-800
3G
BC858A
125-250
3J
BC858B
220-475
3K
BC858C
420-800
3L
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