BC856W Datasheet, PDF (2/2 Pages) NXP Semiconductors – PNP general purpose transistors

SMD Type
TransistIoCrs
BC856W,BC857W,BC858W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
BC856W
BC857W,BC858W
DC current gain BC856AW,BC857AW
BC856BW,BC857BW
BC857CW
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector capacitance
Emitter capacitance
Transition frequency
Noise figure
* Pulse test: tp 300ìs, ä 0.02.
Symbol
Testconditons
ICBO VCB = -30 V; IE = 0
ICBO VCB = -30 V; IE = 0;Tj = 150
IEBO VEB = -5 V; IC = 0
hFE IC = -2 mA; VCE = -5 V
VCE(sat)
VBE(sat)
VBE
CC
Ce
fT
NF
IC = -10 mA; IB = -0.5 mA
IC = -100 mA; IB = -5 mA;*
IC = -10 mA; IB = -0.5 mA
IC = -100 mA; IB = -5 mA;*
IC = -2 mA; VCE = -5 V
IC = -10 mA; VCE = -5 V
VCB = -10 V; IE = Ie = 0;f = 1 MHz
VEB = -0.5 V; IC = Ic = 0;f = 1 MHz
VCE = -5 V; IC = -10 mA;f = 100 MHz
IC = -200 ìA; VCE = -5 V;RS = 2 kÙ; f
= 1 kHz;B = 200 Hz
Min Typ Max Unit
-1 -15 nA
-4 ìA
-100 nA
125
475
125
800
125
250
220
475
420
800
-75 -300 mV
-250 -600 mV
-700
mV
-850
mV
-600 -650 -750 mV
-820 mV
3 pF
12 pF
100
MHz
10 dB
hFE Classification
TYPE
Marking
BC856W
3D
BC856AW
3A
BC856BW
3B
TYPE
Marking
BC857W
3H
BC857AW
3E
BC857BW
3F
BC857CW
3G
TYPE
Marking
BC858W
3M
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