AO3438-HF Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
AO3438-HF (KO3438-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Drain-Source Breakdown Voltage
VDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
Gate Threshold Voltage
IGSS
VGS(th)
Static Drain-Source On-Resistance
RDS(On)
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=250 uA, VGS=0V
VDS=20V, VGS=0V
VDS=20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±8V
VDS=VGS , ID=250μA
VGS=4.5V, ID=3A
VGS=4.5V, ID=3A TJ=125℃
VGS=2.5V, ID=2.8A
VGS=1.8V, ID=2.5A
VGS=4.5V, VDS=5V
VDS=5V, ID=3A
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=10V, ID=3A
VGS=5V, VDS=10V, RL=3.3Ω,RG=6Ω
IF= 3A, dI/dt= 100A/us
IS=1A,VGS=0V
Min Typ Max Unit
20
V
1
uA
5
±100 nA
0.5
1
V
62
85
mΩ
70
85
16
A
11
S
260 320
48
pF
27
3 4.5 Ω
2.9 3.8
0.4
nC
0.6
2.5
3.2
21
ns
3
14 19
3.8
nC
2
A
1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
B8** F
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