AO3435-HF Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

SMD Type
MOSFET
P-Channel MOSFET
AO3435-HF (KO3435-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
ID(ON)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
Test Conditions
ID=-250μA, VGS=0V
VDS=-20V, VGS=0V
VDS=-20V, VGS=0V, TJ=55℃
VDS=0V, VGS=±8V
VDS=VGS , ID=-250μA
VGS=-4.5V, ID=-3.5A
VGS=-4.5V, ID=-3.5A TJ=125℃
VGS=-2.5V, ID=-3A
VGS=-1.8V, ID=-2A
VGS=-1.5V, ID=-0.5A
VGS=-4.5V, VDS=-5V
VDS=-5V, ID=-3.5A
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-3.5A
VGS=-4.5V, VDS=-10V, RL=3Ω,
RGEN=6Ω
IF=-3.5A, dI/dt=100A/μs
IS=-1A,VGS=0V
Min Typ Max Unit
-20
V
-1
uA
-5
±100 nA
-0.5
-1
V
70
100
90 mΩ
110
130
-25
A
15
S
510 745
70
pF
52
18 23 Ω
5.6 11
0.6
nC
1.8
11
10
60
ns
30
17 49
4
nC
-1.4 A
-1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
B5** F
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