AO3434A Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
AO3434A (KO3434A)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS ID=250 uA, VGS=0V
30
V
Zero Gate Voltage Drain Current
VDS=30V, VGS=0V
IDSS
VDS=30V, VGS=0V, TJ=55℃
1
uA
5
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±10V
±10 uA
Gate Threshold Voltage
VGS(th) VDS=VGS , ID=250μA
0.7
1.5 V
VGS=10V, ID=4A
52
Static Drain-Source On-Resistance
RDS(On)
VGS=10V, ID=4A TJ=125℃
VGS=4.5V, ID=3A
82
mΩ
60
VGS=2.5V, ID=2A
78
On state drain current
ID(ON) VGS=10V, VDS=5V
20
A
Forward Transconductance
gFS
VDS=5V, ID=4A
15
S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS=0V, VDS=15V, f=1MHz
245
35
pF
Reverse Transfer Capacitance
Crss
20
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1MHz
5
Ω
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Qg
VGS=10V, VDS=15V, ID=4A
Qgs
5.7 10
2.6 5
nC
0.5
Gate Drain Charge
Qgd
1
Turn-On DelayTime
td(on)
2
Turn-On Rise Time
Turn-Off DelayTime
tr
3.5
VGS=10V, VDS=15V, RL=3.75Ω,RG=3Ω
td(off)
22
ns
Turn-Off Fall Time
tf
3.5
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF= 4A, dI/dt= 500A/us
Qrr
6.5
7.5
nC
Maximum Body-Diode Continuous Current
IS
1.5 A
Diode Forward Voltage
VSD
IS=1A,VGS=0V
1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
Y4**
2 _{www.kexin.com.cn}