AO3434 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
N-Channel MOSFET
AO3434 (KO3434)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
VDSS ID=250μA, VGS=0V
VDS=30V, VGS=0V
IDSS
VDS=30V, VGS=0V, TJ=55℃
IGSS VDS=0V, VGS=±16V
VGS(th) VDS=VGS , ID=250μA
VGS=10V, ID=4.2A
RDS(On) VGS=10V, ID=4.2A TJ=125℃
VGS=4.5V, ID=2A
ID(ON) VGS=10V, VDS=5V
gFS VDS=5V, ID=4.2A
Ciss
Coss VGS=0V, VDS=15V, f=1MHz
Crss
Rg
VGS=0V, VDS=0V, f=1MHz
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
IS
VSD
VGS=10V, VDS=15V, ID=4.2A
VGS=10V, VDS=15V, RL=3.6Ω,RG=3Ω
IF= 4.2A, dI/dt= 100A/μs
IS=1A,VGS=0V
Min Typ Max Unit
30
V
1
uA
5
±10 uA
1
1.8 V
52
74 mΩ
75
30
A
8.5
S
269 340
65
pF
41
1 1.5 Ω
5.7 7.2
3
nC
1.37
0.65
3.8
8
23 ns
5.5
15.5 21
7.1
nC
1.8 A
1
V
■ Marking
Marking
B4**
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