AO3424 Datasheet, PDF (2/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

SMD Type
MOSFET
N-Channel MOSFET
AO3424 (KO3424)
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol
Test Conditions
Min Typ Max Unit
VDSS ID=250 uA, VGS=0V
30
V
VDS=30V, VGS=0V
IDSS
VDS=30V, VGS=0V, TJ=55℃
1
uA
5
IGSS
VDS=0V, VGS=±12V
±100 nA
VGS(th) VDS=VGS , ID=250μA
0.5
1.5 V
VGS=10V, ID=3.8A
55
RDS(On)
VGS=10V, ID=3.8A TJ=125℃
VGS=4.5V, ID=3.5A
84
mΩ
65
VGS=2.5V, ID=1A
85
ID(ON) VGS=10V, VDS=5V
15
A
gFS
VDS=5V, ID=3.8A
14
S
Ciss
185
285
Coss
VGS=0V, VDS=15V, f=1MHz
25
45 pF
Crss
10
25
Rg
VGS=0V, VDS=0V, f=1MHz
2.1
6.5 Ω
Qg
VGS=10V, VDS=15V, ID=3.8A
Qgs
10 12
4.7
nC
0.95
Qgd
1.6
td(on)
3.5
tr
1.5
VGS=10V, VDS=15V, RL=3.95Ω,RG=3Ω
td(off)
17.5
ns
tf
2.5
trr
IF= 3.8A, dI/dt= 100A/us
Qrr
8.5 11
2.6 3.5 nC
IS
1.5 A
VSD
IS=1A,VGS=0V
1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
AT**
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