AO3423-HF Datasheet, PDF (2/5 Pages) Guangdong Kexin Industrial Co.,Ltd – P-Channel MOSFET

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P-Channel MOSFET
AO3423-HF (KO3423-HF)
■ EFleeactturirceasl Characteristics Ta = 25 ^℃
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance *
Forward Transconductance *
Diode Forward Voltage *
Total Gate Charge
Gate-Source Charge
Symbol
Test conditions
V(BR)DSS VGS = 0 V, ID = -250 uA
VGS(th) VDS = VGS, ID = -250 uA
IGSS VDS = 0 V, VGS = ± 8 V
VDS = -20 V, VGS = 0 V
IDSS
VDS = -20 V, VGS = 0 V, TJ = 55
ID(on)
VDS ≤ -5 V, VGS = -4.5 V
VDS _≤ -5 V, VGS = -2.5 V
VGS = -4.5 V, ID = -2.8 A
rDS(on)
VGS = -2.5 V, ID = -2.0 A
gfs VDS = -5 V, ID = -2.8 A
VSD IS = -0.75 A, VGS = 0 V
Qg
Qgs VDS = -6V ,VGS = -4.5 V , ID= -2.8 A
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qgd
Ciss
Coss
Crss
VDS = -6V ,VGS = 0 , f = 1 MHz
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
VDD = -6V , RL = 6 Ω ,
ID = -1A , VGEN =- 4.5V , RG = 6 Ω
* Pulse test: PW ≤ 300 u s du ty cycle ≤ 2%.
MOSFET
Min Typ Max Unit
-20
-0.45
V
-0.95
± 100 nA
-1
uA
-10
-6
A
-3
0.10
Ω
0.15
6.5
S
-0.8 -1.2 V
4.5 10
0.7
nC
1.1
375
95
pF
65
20 30
40 60
ns
30 45
20 30
■ Marking
Marking
N01* F
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