AO3422-HF Datasheet, PDF (2/4 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel MOSFET

SMD Type
MOSFET
N-Channel MOSFET
AO3422-HF (KO3422-HF)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Drain-Source Breakdown Voltage
VDSS ID=10 mA, VGS=0V
55
V
Zero Gate Voltage Drain Current
VDS=44V, VGS=0V
IDSS
VDS=44V, VGS=0V, TJ=55℃
1
uA
5
Gate-Body Leakage Current
IGSS
VDS=0V, VGS=±12V
±100 nA
Gate Threshold Voltage
VGS(th) VDS=VGS , ID=250μA
0.6
2
V
VGS=4.5V, ID=2.1A
160
Static Drain-Source On-Resistance
RDS(On) VGS=4.5V, ID=2.1A TJ=125℃
210 mΩ
VGS=2.5V, ID=1.5A
200
On state drain current
ID(ON) VGS=4.5V, VDS=5V
10
A
Forward Transconductance
gFS
VDS=5V, ID=2.1A
11
S
Input Capacitance
Output Capacitance
Ciss
Coss
VGS=0V, VDS=25V, f=1MHz
214 300
31
pF
Reverse Transfer Capacitance
Crss
12.6
Gate Resistance
Rg
VGS=0V, VDS=0V, f=1MHz
1.3 3
Ω
Total Gate Charge
Gate Source Charge
Qg
Qgs
VGS=4.5V, VDS=27.5V, ID=2.1A
2.6 3.3
0.6
nC
Gate Drain Charge
Qgd
0.8
Turn-On DelayTime
td(on)
2.3
Turn-On Rise Time
Turn-Off DelayTime
tr
2.4
VGS=10V, VDS=27.5V, RL=12Ω,RG=3Ω
td(off)
16.5
ns
Turn-Off Fall Time
tf
2
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
IF= 2.1A, dI/dt= 100A/us
Qrr
20 30
17
nC
Maximum Body-Diode Continuous Current
IS
1
A
Diode Forward Voltage
VSD
IS=1A,VGS=0V
1
V
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■ Marking
Marking
AR** F
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